BSO080P03NS3G Datasheet, Infineon Technologies

BSO080P03NS3G power-transistor equivalent, power-transistor.

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Features and benefits

* single P-Channel in SO8
* Qualified according JEDEC1) for target applications
* 150°C operating temperature
* V GS=25 V, specially suited for notebook a.

Application

* 150°C operating temperature
* V GS=25 V, specially suited for notebook applications
* Pb-free plating; RoH.

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