BSP92P Datasheet | Infineon

.. BSR92P SIPMOS® Small-Signal-Transistor Features - P-Channel - Enhancement mode / Logic level - Avalanche rated - Pb-free lead plating; Ro HS pliant - Footprint patible to SOT23 Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A PG-SC59 Type BSR92P Package PG-SC59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LD Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101 (HBM) T C=25 °C T A=25 °C I D=-0.14 A, R GS=25 Ω -0.14 -0.11 -0.56 24 ±20 0.5 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 m J V W °C A Unit Rev 1.0 page 1 2007-04-10 .. BSR92P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R th JA minimal footprint, steady state 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-130 µA V DS=-250 V, V GS=0 V, T j=25 °C V DS=-250 V, V GS=0 V, T j=150 °C Gate-source leakage current I GSS V GS=-20 V, V DS=0 V V GS=-2.8 V, I D=-0.025 A Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=0.13 A V GS=-10 V, I D=-0.14 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.11 A -250 -2 -1.5 -1 V Zero gate voltage drain current I DSS -...