Datasheet Summary
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2nd generation thinQ!TM SiC Schottky Diode
Features
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- - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications:
- SMPS, PFC, snubber
Chip Type
VBR 600V
IF 4A
Die Size 1.146 x 0.968 mm2
Package sawn on foil
MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment
DataS...