IDC05S60C Datasheet | Infineon

.. 2nd generation thinQ!TM SiC Schottky Diode Features : - - - - - - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: - SMPS, PFC, snubber Chip Type VBR 600V IF 5A Die Size 1.45 x 1.162 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment DataSh...