• Part: IDT10S60C
  • Description: 2nd Generation thinQ SiC Schottky Diode
  • Manufacturer: Infineon
  • Size: 267.33 KB
Download IDT10S60C Datasheet PDF
IDT10S60C page 2
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IDT10S60C page 3
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Datasheet Summary

.. 2nd Generation thinQ!TM SiC Schottky Diode Features - Revolutionary semiconductor material - Silicon Carbide - Switching behavior benchmark - No reverse recovery/ No forward recovery - No temperature influence on the switching behavior - High surge current capability - Pb-free lead plating; RoHs pliant - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 24 10 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: - CCM PFC - Motor Drives Type IDT10S60C Package PG-TO220-2-2 Marking I F=5 A, T j=25 °C D10S60C Pin 1 C Pin 2 A Maximum ratings, at...