* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) fo
IPA086N10N3G Datasheet (523.96 KB)
IPA086N10N3G
Infineon ↗ Technologies
523.96 KB
Mosfet.
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 .
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