Part IPA086N10N3G
Description MOSFET
Category MOSFET
Manufacturer Infineon
Size 523.96 KB
Infineon
IPA086N10N3G

Overview

  • N-channel, normal level
  • Excellent gate charge x R DS(on) product (FOM)
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Ideal for high-frequency switching and synchronous rectification
  • Halogen-free according to IEC61249-2-21
  • Fully isolated package (2500 VAC; 1 minute) Type