IPA126N10N3G Datasheet | Infineon

Features - N-channel, normal level - Excellent gate charge x R DS(on) product (FOM) - Very low on-resistance R DS(on) - 175 °C operating temperature - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 12.6 35 V mΩ A - Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G Package Marking PG-TO220-FP 126N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 .. 1) 2) Value 35 25 140 90 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=35 A, R GS=25 Ω m J V W °C T C=25 °C 33 -55 ... 175 55/175/56 J-STD20 and JESD22 See figure 3 Rev. 2.2 page 1 2009-07-09 IPA126N10N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R th JC 4.5 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=45 µA V DS=100 V, V GS=0 V, T j=25 °C V DS=100 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=35 A V GS=6 V, I D=18 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=35 A 100 2 2.7 0.1 3.5 1 µA V 10 1 10.9 13.5 1.1 50 100 100 12.6 24 Ω S n A mΩ 3) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. .. Rev. 2.2 page 2 2009-07-09 IPA126N10N3 G Parameter Symbol Conditions...