IPA100N08N3G Datasheet | Infineon

Features - Ideal for high frequency switching and sync. rec. - Optimized technology for DC/DC converters - Excellent gate charge x R DS(on) product (FOM) - N-channel, normal level - 100% avalanche tested - Pb-free plating; Ro HS pliant - Qualified according to JEDEC1) for target applications Type IPA100N08N3 G Product Summary V DS R DS(on),max ID 80 10 40 V mΩ A Package Marking PG-TO220-FP 100N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 .. 1) 2) Value 40 30 160 110 ±20 Unit A I D,pulse E AS V GS P tot T j, T stg T C=25 °C I D=40 A, R GS=25 Ω m J V W °C T C=25 °C 35 -55 ... 175 55/175/56 J-STD20 and JESD22 Current is limited by package; with an Rth JC=1.5 K/W in a standard TO-220 package the chip is able to carry 72A. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev. 2.0 page 1 2008-11-21 IPA100N08N3 G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R th JC R th JA minimal footprint 6 cm2 cooling area5) 4.3 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 m A V GS(th) I DSS V DS=V GS, I D=46 µA V DS=80 V, V GS=0 V, T j=25 °C V DS=80 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=40 A V GS=6 V, I D=20 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=40 A 80 2 2.8 0.1 3.5 1 µA V 10 1 8.4 10.9 1.6 55 100 100 10 18.2 Ω S n A mΩ 5) 2 Device on 40 mm x 40 mm x 1.5 mm...