IPA126N10N3G Description
IPA126N10N3 G OptiMOSTM3 Power-Transistor.
IPA126N10N3G Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification Type IPA126N10N3 G
- case R thJC 4.5 K/W
- 1880 330 14 12 6 20 4
- 9 5 8 26 4.7 35