IPB04CNE8NG Description
IPB04CNE8N G IPP04CNE8N G OptiMOS®2 Power-Transistor.
IPB04CNE8NG Key Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification Type IPB04CNE8N G IPP04CNE8N G
- case Thermal resistance, junction
- ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W Values typ. max. Unit
- 10500 1970 130 34 78 76 25