IPB042N10N3G - 100V MOSFET

Datasheet Summary

Description

Features

N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating; RoHS compliant.
Qualified according to JEDEC1) for target.

Infineon Technologies

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Datasheet Details

Part number	IPB042N10N3G
Manufacturer	Infineon Technologies
File Size	976.51 KB
Description	100V MOSFET
Datasheet	IPB042N10N3G Datasheet
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IPB042N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.2 mΩ ID 137 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB042N10N3 G Package PG-TO 263-3 Marking 042N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Nov 13, 2015 |