IPB042N10N3G - N-Channel MOSFET

Datasheet Summary

Features

With TO-263(D2PAK) packaging.
Ultra-fast body diode.
High speed switching.
Very low on-resistence.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

INCHANGE

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Datasheet Details

Part number	IPB042N10N3G
Manufacturer	INCHANGE
File Size	200.61 KB
Description	N-Channel MOSFET
Datasheet	IPB042N10N3G Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Very low on-resistence ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPB042N10N3G ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 137 150 548 PD Total Dissipation 214 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient

Published: Sep 3, 2020 |