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IPB042N10N3 - 100V MOSFET

Download the IPB042N10N3 datasheet PDF. This datasheet also covers the IPB042N10N3G variant, as both devices belong to the same 100v mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB042N10N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPB042N10N3G 100V MOSFET Infineon Technologies
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB042N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.2 mΩ ID 137 A D²PAK Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPB042N10N3 G Package PG-TO 263-3 Marking 042N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.