• Part: IPB80N06S2-H5
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 152.91 KB
Download IPB80N06S2-H5 Datasheet PDF
Infineon
IPB80N06S2-H5
IPB80N06S2-H5 is Power-Transistor manufactured by Infineon.
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green package (lead free) - Ultra low Rds(on) - 100% Avalanche tested IPB80N06S2-H5 IPP80N06S2-H5 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.2 mΩ 80 A PG-TO263-3-2 PG-TO220-3-1 Type IPB80N06S2-H5 IPP80N06S2-H5 Package Ordering Code Marking PG-TO263-3-2 SP0002-18162 2N06H5 PG-TO220-3-1 SP0002-18155 2N06H5 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D= 80 A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 320 700 ±20 300 -55 ... +175 55/175/56 Unit A m J V W...