IPB80N06S2-H5 Datasheet Text
OptiMOS® Power-Transistor
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (lead free)
- Ultra low Rds(on)
- 100% Avalanche tested
IPB80N06S2-H5 IPP80N06S2-H5
Product Summary V DS R DS(on),max (SMD version) ID
55 V 5.2 mΩ 80 A
PG-TO263-3-2
PG-TO220-3-1
Type IPB80N06S2-H5 IPP80N06S2-H5
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-18162 2N06H5
PG-TO220-3-1 SP0002-18155 2N06H5
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D= 80 A...