IPD35N10S3L-26 Description
OptiMOS®-T Power-Transistor.
IPD35N10S3L-26 Key Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
- case SMD version, device on PCB
- 24.5 31.9 mW
- 20.0 24.0