IPD70N10S3L-12
IPD70N10S3L-12 is Power-Transistor manufactured by Infineon.
OptiMOS™-T Power-Transistor
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
Product Summary VDS RDS(on),max I
100 V 11.5 mW 70 A
PG-TO252-3-11
Type
Package
Marking
PG-TO252-3-11 QN10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1)
E AS
I D=35A
Avalanche current, single pulse
I...
