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Infineon Technologies Electronic Components Datasheet

IPD70N10S3L-12 Datasheet

Power-Transistor

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OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPD70N10S3L-12
Product Summary
V DS
R DS(on),max
ID
100 V
11.5 m
70 A
PG-TO252-3-11
Type
IPD70N10S3L-12
Package
Marking
PG-TO252-3-11 QN10L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
70
48
280
410
70
±16
125
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2008-02-12


Infineon Technologies Electronic Components Datasheet

IPD70N10S3L-12 Datasheet

Power-Transistor

No Preview Available !

IPD70N10S3L-12
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case
SMD version, device on PCB
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 1.2 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= 1mA
V GS(th) V DS=V GS, I D=83µA
I DSS
V DS=80V, V GS=0V,
T j=25°C
V DS=80V, V GS=0V,
T j=125°C1)
I GSS
V GS=16V, V DS=0V
R DS(on) V GS=4.5V, I D=70A
V GS=10 V, I D=70 A
100 -
-V
1.2 1.7 2.4
- 0.01 0.1 µA
- 1 10
- - 100 nA
- 11.7 15.2 m
- 9.6 11.5
Rev. 1.0
page 2
2008-02-12


Part Number IPD70N10S3L-12
Description Power-Transistor
Maker Infineon Technologies
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