IPD70N10S3L-12 Power-Transistor

Infineon Technologies

IPD70N10S3L-12 Description

OptiMOS™-T Power-Transistor .

IPD70N10S3L-12 Features

* N-channel - Enhancement mode
* Automotive AEC Q101 qualified
* MSL1 up to 260°C peak reflow
* 175°C operating temperature
* RoHS compliant
* 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.5 mW 70 A PG-TO252-3-11

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IPD70N10S3L-12 Datasheet Preview — Preview of IPD70N10S3L-12 PDF

Datasheet Details

Part number: IPD70N10S3L-12
Manufacturer: Infineon ↗ Technologies
File Size: 910.75 KB
Datasheet: IPD70N10S3L-12-InfineonTechnologies.pdf
Description: Power-Transistor

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Power-Transistor Infineon Technologies

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