IPD70N04S3-07
IPD70N04S3-07 is Power-Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green package (Ro HS pliant)
- 100% Avalanche tested
Product Summary V DS R DS(on),max ID
40 V 6.0 mΩ 82 A
PG-TO252-3-11
Type IPD70N04S3-07
Package
Marking
PG-TO252-3-11 QN0407
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V1)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=50 A
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 82
280 145 ±20 79 -55 ... +175 55/175/56
Unit A m J V W °C
Rev. 1.0 page 1
2007-05-03
Parameter
Symbol...
