IPD70N10S3-12
IPD70N10S3-12 is Power Transistor manufactured by Infineon.
Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Ro HS pliant
- 100% Avalanche tested
Product Summary VDS RDS(on),max ID
100 V 11.1 m W 70 A
PG-TO252-3-11
Type
Package
Marking
PG-TO252-3-11 QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1)
E AS
I D=35A
Avalanche current, single pulse
I AS
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 70
280 410 70 ±20 125 -55 ... +175...
