Datasheet4U Logo Datasheet4U.com

IPD70N10S3-12 Datasheet Power Transistor

Manufacturer: Infineon

Overview: OptiMOS™-T Power-Transistor.

Key Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V.

More Datasheets from Infineon

Part Number Description
IPD70N10S3L-12 Power-Transistor
IPD70N03S4L-04 Power-Transistor
IPD70N04S3-07 Power-Transistor
IPD70P04P4-09 Power-Transistor
IPD70P04P4L-08 Power-Transistor
IPD75N04S4-06 Power-Transistor
IPD038N06N3G Power-Transistor
IPD03N03LA Power-Transistor
IPD03N03LB Power-Transistor
IPD042P03L3G Power-Transistor

IPD70N10S3-12 Distributor