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IPD70N10S3L-12 - Power-Transistor

Key Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • RoHS compliant.
  • 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.5 mW 70 A PG-TO252-3-11 Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.