IPD70N10S3L-12 Description
OptiMOS™-T Power-Transistor.
IPD70N10S3L-12 Key Features
- N-channel
- Enhancement mode
- Automotive AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- RoHS pliant
- 100% Avalanche tested
- case SMD version, device on PCB
- 11.7 15.2 mW
- 4270 5550 pF