900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Infineon Technologies Electronic Components Datasheet

IPI029N06N Datasheet

Power Transistor

No Preview Available !

Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
IPI029N06N
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
2.9 mW
100 A
65 nC
56 nC
PG-TO262-3
Type
IPI029N06N
Package
PG-TO262-3
Marking
029N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
100 A
100
V GS=10 V, T C=25 °C,
R thJA =50K/W
24
Pulsed drain current2)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
110 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) See figure 3 for more detailed information
3) See figure 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20


Infineon Technologies Electronic Components Datasheet

IPI029N06N Datasheet

Power Transistor

No Preview Available !

Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C,
R thJA=50 K/W
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPI029N06N
Value
136
3.0
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
bottom
minimal footprint
6 cm² cooling area4)
-
-
-
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=75 µA
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
V DS=60 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS=10 V, I D=100 A
V GS=6 V, I D=25 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=100 A
60
2.1
-
-
-
-
-
-
80
- 1.1 K/W
- 62
- 40
- -V
2.8 3.3
0.5 1 µA
10 100
10 100 nA
2.7 2.9 mW
3.3 4.4
1.3 1.95 W
160 - S
Rev.2.2
page 2
2012-12-20


Part Number IPI029N06N
Description Power Transistor
Maker Infineon Technologies
PDF Download

IPI029N06N Datasheet PDF





Similar Datasheet

1 IPI029N06N Power Transistor
Infineon Technologies





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy