IPI029N06N
IPI029N06N is Power Transistor manufactured by Infineon.
Type
OptiMOSTM Power-Transistor
Features
- Optimized for high performance SMPS, e.g. sync. rec.
- 100% avalanche tested
- Superior thermal resistance
- N-channel
- Qualified according to JEDEC1) for target applications
- Pb-free lead plating; RoHS pliant
- Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 2.9 mW 100 A
65 nC 56 nC
PG-TO262-3
Type IPI029N06N
Package PG-TO262-3
Marking 029N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R thJA =50K/W
Pulsed...
