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IPI029N06N Power Transistor

IPI029N06N Description

Type OptiMOSTM Power-Transistor .

IPI029N06N Features

* Optimized for high performance SMPS, e. g. sync. rec.
* 100% avalanche tested
* Superior thermal resistance
* N-channel

IPI029N06N Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 IPI029N06N Product Summary VDS RDS(on),max ID QOSS QG(0V. .10V) 60 V 2.9 mW 100 A 65 nC 56 nC PG-TO262-3 Type IPI029N06N Package PG-TO262-3 Marking 029N06N Maximum ratings, at T j=25 °C, unless ot

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Power Transistor Infineon Technologies
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