SIGC16T120C datasheet, igbt equivalent, Infineon Technologies

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datasheet Download (Size : 92.07KB)

Features and benefits

* 1200V NPT technology
* 200µm chip
* short circuit prove
* positive temperature coefficient
* easy paralleling C This chip is used for:
* BUP 3.

Application

* drives G E Chip Type SIGC16T120C VCE 1200V ICn 8A Die Size 4.04 x 4 mm2 Package sawn on foil Ordering Cod.

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 M.

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