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SIGC104T170R2C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1700V NPT technology.
  • 280µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • chip only.

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Datasheet Details

Part number SIGC104T170R2C
Manufacturer Infineon Technologies
File Size 96.66 KB
Description IGBT
Datasheet download datasheet SIGC104T170R2C Datasheet
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www.DataSheet4U.com SIGC104T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • chip only Applications: • drives G E Chip Type SIGC104T170R2C VCE 1700V ICn 50A Die Size 10.12 x 10.18 mm2 Package sawn on foil Ordering Code Q67041-A4695A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.12 x 10.18 103 / 71.5 8x( 1.78x2.58 ) 0.757 x 1.
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