SIGC42T120C Datasheet | Infineon

IGBT Chip in NPT-technology Features : - 1200V NPT technology - low turn-off losses - positive temperature coefficient - easy paralleling This chip is used for: - power module BUP 314 Applications: - drives Chip Type SIGC42T120C 1200V 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Remended storage environment 6.59 x 6.49 2 x ( 1.58 x 2.18 ) 1.06 x 0.65 mm2 200 µm 150 mm Photoimide 3200 nm AlSiCu Ni Ag - system suitable for...