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Preliminary
SIGC42T120CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
This chip is used for: • power module BSM25GD120DLC E3224 Applications: • drives
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Chip Type SIGC42T120CL SIGC42T120CL
VCE 1200V 1200V
ICn 25A 25A
Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2
Package
Ordering Code C67078-A4675sawn on foil A001 C67078-A4675unsawn A002
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.
SIGC42T120CL Datasheet
