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SIGC42T120C - IGBT

Description

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved.

Features

  • 1200V NPT technology.
  • low turn-off losses.
  • positive temperature coefficient.
  • easy paralleling SIGC42T120C This chip is used for:.
  • power module BUP 314.

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Datasheet preview – SIGC42T120C

Datasheet Details

Part number SIGC42T120C
Manufacturer Infineon
File Size 60.81 KB
Description IGBT
Datasheet download datasheet SIGC42T120C Datasheet
Additional preview pages of the SIGC42T120C datasheet.

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Full PDF Text Transcription

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IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling SIGC42T120C This chip is used for:  power module BUP 314 Applications:  drives C G E Chip Type SIGC42T120C VCE IC 1200V 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.59 x 6.49 2 x ( 1.58 x 2.18 ) 1.06 x 0.65 mm2 42.8 200 µm 150 mm 334 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm  0.65mm ; max 1.
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