SPB30N03
SPB30N03 is SIPMOS Power Transistor manufactured by Infineon.
Features
- N channel
- Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS ID
30 30
Enhancement mode
RDS(on) 0.023 Ω
- Avalanche rated
- dv/dt rated
- 175˚C operating temperature
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Type SPP30N03 SPB30N03
Package
Ordering Code
Packaging
Pin 1 G
Pin 2 Pin 3 D S
P-TO220-3-1 Q67040-S4736-A2 Tube P-TO263-3-2 Q67040-S4736-A3 Tape and Reel
Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 30 120 145 7.5 6 k V/µs m J Unit A
TC = 25 ˚C, TC = 100 ˚C
1)
Pulsed drain current
IDpulse EAS EAR dv/dt
TC = 25 ˚C
Avalanche energy, single pulse
ID = 30 A, VDD = 25 V, RGS = 25 Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C
Gate source voltage Power dissipation
VGS Ptot T j , Tstg
±20 75 -55... +175 55/175/56
V W ˚C
TC = 25 ˚C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet 1
SPP 30N03
Thermal Characteristics Parameter Characteristics Thermal resistance,...
