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Infineon Technologies Electronic Components Datasheet

SPDU07N60S5 Datasheet

Cool MOS Power Transistor

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Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Worldwide best RDS(on) in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP07N60S5, SPB07N60S5
SPI07N60S5
P-TO262
VDS
RDS(on)
ID
600 V
0.6
7.3 A
P-TO263-3-2
P-TO220-3-1
2
P-TO220-3-1
123
Type
SPP07N60S5
SPB07N60S5
SPI07N60S5
Package
P-TO220-3-1
P-TO263-3-2
P-TO262
Ordering Code
Q67040-S4172
Q67040-S4185
Q67040-S4328
Marking
07N60S5
07N60S5
07N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = - A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 7.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
7.3
4.6
14.6
230
0.5
7.3
±20
±30
83
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.1
Page 1
2004-03-30


Infineon Technologies Electronic Components Datasheet

SPDU07N60S5 Datasheet

Cool MOS Power Transistor

No Preview Available !

SPP07N60S5, SPB07N60S5
SPI07N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
Symbol
dv/dt
Value
20
Unit
V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC
RthJA
RthJA
Tsold
min.
-
-
Values
typ. max.
- 1.5
- 62
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=7.3A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
I DSS
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
ID=350µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
VGS=20V, VDS=0V
VGS=10V, ID=4.6A,
Tj=25°C
Tj=150°C
3.5
-
-
-
-
-
Gate input resistance
RG
f=1MHz, open Drain
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 1
- 100
- 100
0.54 0.6
1.46 -
19 -
Unit
V
µA
nA
Rev. 2.1
Page 2
2004-03-30


Part Number SPDU07N60S5
Description Cool MOS Power Transistor
Maker Infineon Technologies
Total Page 12 Pages
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