TDA21106
Overview
The dual high speed driver is designed to drive a wide range of N-Channel low side and N-Channel high side MOSFETs with varying gate charges. It has a small propagation delay from input to output, short rise and fall times and the same pin configuration to be compatible to TDA21101G and HIP660.
- P-DSO-8 Fast rise and fall times for frequencies up to 2 MHz Capable of sinking more than 4A peak currents for lowest switching losses Charges High Side MOSFET gate drive voltage from 6 to 12V according to PVCC setting; Low Side MOSFET at 12 V. Adjustable High Side MOSFET gate drive voltage via PVCC pin for optimizing ON losses and gate drive losses Integrates the bootstrap diode for reducing the part count Prevents from cross-conducting by adaptive gate drive control High voltage rating on Phase node Supports shut-down mode for very low quiescent current through three-state input Compatible to standard PWM controller ICs (Intersil, Analog Devices) Floating High Side MOSFET drive Footprint compatible to TDA21101G and HIP6601B Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s Package P-DSO-8 Marking 21106 Ordering Code Q67042-S4223 Description Gate drive output for the N-Channel High side MOSFET Floating bootstrap pin. To be connected to the external bootstrap capacitor to generate the gate drive voltage for the high side N-Channel MOSFET Input for the PWM controller signal Ground Gate drive output for the N-Channel Low Side MOSFET Supply voltage Input to adjust the High Side gate drive To be connected to the junction of the High Side and the Low Side MOSFET Type TDA21106 Pinout Top View
