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Infineon Technologies Electronic Components Datasheet

BAT68-08S Datasheet

Silicon Schottky Diodes

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Silicon Schottky Diodes
For mixer applications in the VHF / UHF range
For high-speed switching applications
Pb-free (RoHS compliant) package
BAT68...
BAT68
!

BAT68-04
BAT68-04W
!
, ,

BAT68-06
BAT68-06W
!
, ,

BAT68-07W
"!
, ,

BAT68-08S
$#
"
, ,
,!
!
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BAT68
BAT68-04
BAT68-04W
BAT68-06
BAT68-06W
BAT68-07W
BAT68-08S
Package
SOT23
SOT23
SOT323
SOT23
SOT323
SOT343
SOT363
Configuration
single
series
series
common anode
common anode
parallel pair
parallel triple
LS(nH)
1.8
1.8
1.4
1.8
1.4
1.6
1.4
Marking
83s
84s
84s
86s
86s
87s
83s
1 2011-06-15


Infineon Technologies Electronic Components Datasheet

BAT68-08S Datasheet

Silicon Schottky Diodes

No Preview Available !

BAT68...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
BAT68, TS 77°C
BAT68-04, BAT68-06, TS 61°C
BAT68-04W/-06W/-08S, TS 92°C
BAT68-07W, TS 89°C
Junction temperature
Storage temperature
VR
IF
Ptot
Tj
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
BAT68
BAT68-04, BAT68-06
BAT68-04W-BAT68-06W, BAT68-08S
BAT68-07W
Symbol
RthJS
Value
8
130
150
150
150
150
150
-55 ... 150
Value
490
590
390
410
Unit
V
mA
mW
°C
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 1 V
VR = 1 V, TA = 60 °C
Forward voltage
IF = 1 mA
IF = 10 mA
V(BR)
IR
VF
8- -
- - 0.1
- - 1.2
- 318 340
340 390 500
Unit
V
µA
mV
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2011-06-15


Part Number BAT68-08S
Description Silicon Schottky Diodes
Maker Infineon Technologies AG
Total Page 12 Pages
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Infineon Technologies AG





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