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BSD314SPE - 3 Small-Signal-Transistor

Key Features

  • P-channel.
  • Enhancement mode.
  • Logic level (4.5V rated).
  • ESD protected.
  • Qualified according AEC Q101.
  • 100% Lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.5 V ID 30 140 230 -1.5 PG-SOT-363 6 5 4 V mΩ A 1 2 3 Type BSD314SPE Package PG-SOT-363 Tape and Reel Information L6327: 3000 pcs/ reel Marking XDs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Con.

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Datasheet Details

Part number BSD314SPE
Manufacturer Infineon Technologies AG
File Size 276.92 KB
Description 3 Small-Signal-Transistor
Datasheet download datasheet BSD314SPE Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSD314SPE OptiMOS™-P 3 Small-Signal-Transistor Features • P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according AEC Q101 • 100% Lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.5 V ID 30 140 230 -1.5 PG-SOT-363 6 5 4 V mΩ A 1 2 3 Type BSD314SPE Package PG-SOT-363 Tape and Reel Information L6327: 3000 pcs/ reel Marking XDs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-1.5A, R GS=25 Ω I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Value -1.5 -1.2 -6.