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Infineon Technologies Electronic Components Datasheet

BSP60 Datasheet

PNP Silicon Darlington Transistors

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PNP Silicon Darlington Transistors
 High collector current
 Low collector-emitter saturation voltage
 Complementary types: BSP50 ... BSP52 (NPN)
BSP60 ... BSP62
4
3
2
1 VPS05163
Type
BSP60
BSP61
BSP62
Marking
BSP 60
BSP 61
BSP 62
1=B
1=B
1=B
Pin Configuration
2=C 3=E 4=C
2=C 3=E 4=C
2=C 3=E 4=C
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Total power dissipation, TS = 124 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBO
IC
ICM
IB
Ptot
Tj
Tstg
BSP60 BSP61 BSP62 Unit
45 60 80 V
60 80 90
5 55
1A
2
100 mA
1.5 W
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Nov-30-2001


Infineon Technologies Electronic Components Datasheet

BSP60 Datasheet

PNP Silicon Darlington Transistors

No Preview Available !

BSP60 ... BSP62
Electrical Characteristics at TA = 25°C, unless othertwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BSP60
BSP61
BSP62
V(BR)CEO
45
60
80
-
-
-
V
-
-
-
Collector-base breakdown voltage
IC = 100 µA, IE = 0
BSP60
BSP61
BSP62
V(BR)CBO
60
80
90
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
Collector-emitter cutoff current
VCE = VCEOmax, VBE = 0
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.55 mA
IC = 1 A, IB = 1 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
V(BR)EBO 5
-
ICES
--
IEBO
--
hFE
VCEsat
VBEsat
1000
2000
-
-
-
-
-
-
-
-
-
-
-
10 µA
10
-
-
-
V
1.3
1.8
1.9
2.2
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
Turn-on time
IC = 500 mA, IB1 = IB2 = 0.5mA
Turn-off time
IC = 500 mA, IB1 = IB2 = 0.5mA
1) Pulse test: t 300µs, D = 2%
fT - 200 - MHz
t(on) - 400 - ns
t(off) - 1500 -
2 Nov-30-2001


Part Number BSP60
Description PNP Silicon Darlington Transistors
Maker Infineon Technologies AG
Total Page 5 Pages
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