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Infineon Technologies Electronic Components Datasheet

BUZ32 Datasheet

SIPMOS Power Transistor

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BUZ32 pdf
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
BUZ 32
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 32
VDS
200 V
ID
9.5 A
RDS(on)
0.4
Maximum Ratings
Parameter
Continuous drain current
TC = 29 ˚C
Pulsed drain current
TC = 25 ˚C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 9.5 A, VDD = 50 V, RGS = 25
L = 2 mH, Tj = 25 ˚C
Gate source voltage
Power dissipation
TC = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Data Sheet
1
Ordering Code
C67078-S1310-A2
Values
9.5
38
9.5
6.5
Unit
A
mJ
120
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
˚C
K/W
05.99


Infineon Technologies Electronic Components Datasheet

BUZ32 Datasheet

SIPMOS Power Transistor

No Preview Available !

BUZ32 pdf
BUZ 32
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 200 V, VGS = 0 V, Tj = 25 ˚C
VDS = 200 V, VGS = 0 V, Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 6 A
Symbol
min.
Values
typ.
max.
V(BR)DSS
200
VGS(th)
2.1
IDSS
-
-
IGSS
-
RDS(on)
-
-
3
0.1
10
10
0.3
-
4
1
100
100
0.4
Unit
V
µA
nA
Data Sheet
2
05.99


Part Number BUZ32
Description SIPMOS Power Transistor
Maker Infineon Technologies AG
Total Page 8 Pages
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BUZ32 pdf
BUZ32 Datasheet PDF
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