BUZ32 Datasheet | Specifications & PDF Download

BUZ 323 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package O

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BUZ 326 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 326 VDS 400 V ID 10.5 A R

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isc N-Channel Mosfet Transistor BUZ32 ·FEATURES ·9.5A, 200V ·RDS(ON) = 0.400Ω ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear

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BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package O

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BUZ32 Semiconductor Data Sheet October 1998 File Number 2416.1 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 9.5A, 200V [ /Title This

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SIPMOS ® Power Transistor BUZ 32 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Or

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BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 325 VDS 400 V ID 12.5 A R

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio

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BUZ 32 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 32 VDS 200 V ID 9.5 A RDS(

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BUZ 323 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 323 VDS 400 V ID 15 A RDS

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isc N-Channel Mosfet Transistor ·FEATURES ·High speed switching ·Low RDS(ON) ·Easy driver for cost effective application ·Minimum Lot-to-Lot variatio

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BUZ32 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ32 Voss 200 V Ros(on) 0.4 0 10 9.5 A • 200 VOLTS FOR TELECOMS APPLICATIONS • HIGH

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