HYB18T1G800AF, HYB-18T Datasheet - Infineon Technologies AG

HYB18T1G800AF 1 Gbit DDR2 SDRAM

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (w.

D a t a S he et , V 1. 0 2 , M a y 2 0 0 4 H Y B 1 8 T 1 G 4 00 A F H Y B 1 8 T 1 G 8 00 A F H Y B 1 8 T 1 G 1 60 A F 1 G b i t D D R 2 S D R AM M e m o r y P r o d u c ts N e v e r s t o p t h i n k i n g . Edition 2004-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 5/7/04. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of.

HYB18T1G800AF Features

* High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequency 3-3-3 4-4-4 5-5-5 4-4-4 200 400 3 15 15 40 55 266 533 4 15 15 45 60 5 15 15 45 60 333 667 4 12 12 45 57 Data Rate CAS Late

HYB-18T-1G800.pdf