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HYB18T1G800AF Datasheet, Infineon Technologies AG

HYB18T1G800AF sdram equivalent, 1 gbit ddr2 sdram.

HYB18T1G800AF Avg. rating / M : 1.0 rating-111

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HYB18T1G800AF Datasheet

Features and benefits


* High Performance: -5 -400 -3.7 -533 -3S -667 -3 1Gb DDR2 SDRAM Speed Sorts DDR2 DDR2 DDR2 DDR2 -667 Units tck MHz Mb/s/pin Bin (CL-tRCD-TRP) max. Clock Frequenc.

Application

The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write lat.

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