Datasheet4U Logo Datasheet4U.com

PTF080451 - LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

General Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Full gold metallization ensures excellent device lifetime and reliability.

Key Features

  • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
  • 1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45.

📥 Download Datasheet

Datasheet Details

Part number PTF080451
Manufacturer Infineon Technologies AG
File Size 158.52 KB
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Datasheet download datasheet PTF080451 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTF08A-E Relay Omron
PTF Metal Film Resistors Vishay
PTF10007 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor Ericsson
PTF10009 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor Ericsson
PTF10015 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor Ericsson

Other Datasheets by Infineon Technologies AG

Part Number Description
PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P–1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.