PTF080451

The PTF080451 is LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz designed by Infineon Technologies AG.

Product Overview

Infineon Technologies AG

Part number	PTF080451
Manufacturer	Infineon Technologies AG
File Size	158.52 KB
Description	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
Datasheet	PTF080451_InfineonTechnologiesAG.pdf
Additional preview pages of the PTF080451 datasheet.

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P.
1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 450 mA, f = 959.8 MHz 0 Efficiency 55 50 45.

📁 Similar Datasheet

PTF08A-E - Relay (Omron)
PTF - Metal Film Resistors (Vishay)
PTF10007 - 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10009 - 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10015 - 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10019 - 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10020 - 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor (Ericsson)
PTF10021 - 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor (Ericsson)

Other Datasheets by Infineon Technologies AG

Published: Apr 16, 2005 |