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PTF080451 Datasheet, Infineon Technologies AG

PTF080451 Datasheet, Infineon Technologies AG

PTF080451

datasheet Download (Size : 158.52KB)

PTF080451 Datasheet

PTF080451 mhz

ldmos rf power field effect transistor 45 w/ 869-960 mhz.

ldmos rf power field effect transistor 45 w/ 869-960 mhz.

PTF080451

datasheet Download (Size : 158.52KB)

PTF080451 Datasheet

PTF080451 Features and benefits

PTF080451 Features and benefits


*
* Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power a.

PTF080451 Application

PTF080451 Application

in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
* <.

PTF080451 Description

PTF080451 Description

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
*
* Broadband internal matching T.

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TAGS

PTF080451
LDMOS
Power
Field
Effect
Transistor
869-960
MHz
Infineon Technologies AG

Manufacturer


Infineon (https://www.infineon.com/) Technologies AG

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