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PTF080451 Datasheet

Manufacturer: Infineon
PTF080451 datasheet preview

PTF080451 Details

Part number PTF080451
Datasheet PTF080451_InfineonTechnologiesAG.pdf
File Size 158.52 KB
Manufacturer Infineon
Description LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz
PTF080451 page 2 PTF080451 page 3

PTF080451 Overview

The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF080451 Key Features

  • Broadband internal matching Typical EDGE performance
  • Average output power = 22.5 W
  • Gain = 18 dB
  • Efficiency = 40% Typical CW performance
  • Output power at P-1dB = 60 W
  • Gain = 17 dB
  • Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drif
  • Modulation Spectrum (dB)
  • 10 -20 -30 -40 -50 -60 -70 -80 -90
  • 0.1 3.2

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