ITBH09150B2E, ITBH09150B2 - High Power RF LDMOS FET

Innogration

The ITBH09150B2E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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ITBH09150B2E High Power RF LDMOS FET by Innogration - Datasheet Preview — Official preview page of the **ITBH09150B2E** High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number	ITBH09150B2E, ITBH09150B2
Manufacturer	Innogration
File Size	1.02 MB
Description	High Power RF LDMOS FET
Datasheet	ITBH09150B2-Innogration.pdf
Note	This datasheet PDF includes multiple part numbers: ITBH09150B2E, ITBH09150B2. Please refer to the document for exact specifications by model.
Additional preview pages of the ITBH09150B2E datasheet.

ITBH09150B2E Product details

Description

The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .Frequency Gp (dB) P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Rang.

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Published: Aug 5, 2018 |