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ITBH09200B2E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITBH09200B2E datasheet PDF. This datasheet also includes the ITBH09200B2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ITBH09200B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITBH09200B2E
Manufacturer Innogration
File Size 974.16 KB
Description High Power RF LDMOS FET
Download ITBH09200B2E Download (PDF)

General Description

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITBH09200B2 Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITBH09200B Product Datasheet V2.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operati.

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