- Part: ITBH09200B2E
- Description: High Power RF LDMOS FET
- Manufacturer: Innogration
- Size: 974.16 KB
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ITBH09200B2E Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
- 10 to +10 +32
- 65 to +150 +150 +225
Related Innogration Datasheets
