The ITBH09200B2E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.
| Part number | ITBH09200B2E, ITBH09200B2 |
|---|---|
| Manufacturer | Innogration |
| File Size | 974.16 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
 ITBH09200B2-Innogration.pdf
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| Note |
This datasheet PDF includes multiple part numbers: ITBH09200B2E, ITBH09200B2. Please refer to the document for exact specifications by model. |
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The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
📁 ITBH09200B2E Similar Datasheet
