ITBH09260B2E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITBH09260B2E datasheet PDF. This datasheet also includes the ITBH09260B2 variant, as both parts are published together in a single manufacturer document.

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ITBH09260B2E high power rf ldmos fet by Innogration - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ITBH09260B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ITBH09260B2E
Manufacturer	Innogration
File Size	791.68 KB
Description	High Power RF LDMOS FET
Datasheet	ITBH09260B2E Datasheet

General Description

The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITBH09260B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1200 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITBH09260B Product Datasheet V1.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case O.

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