* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
ITCH16180B2 Datasheet (1.01 MB)
ITCH16180B2
Innogration
1.01 MB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B2 Preliminary Datasheet V2.0 1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs Descript.
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