Datasheet4U Logo Datasheet4U.com

ITCH16180B2E, ITCH16180B2 - High Power RF LDMOS FET

The ITCH16180B2E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the ITCH16180B2E High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH16180B2E, ITCH16180B2
Manufacturer Innogration
File Size 1.01 MB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16180B2-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH16180B2E, ITCH16180B2.
Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH16180B2E datasheet.

ITCH16180B2E Product details

Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

📁 ITCH16180B2E Similar Datasheet

  • ITC008 - Technical Traing Manual (Thomson)
  • ITC1000 - Pulsed Avionics (GHz Technology)
  • ITC1100 - Common base bipolar transistor (GHz Technology)
  • ITC117 - Integrated Telecom Circuits (Clare Inc.)
  • ITC117P - Integrated Telecom Circuits (Clare Inc.)
  • ITC117PL - Integrated Telecom Circuits (IXYS)
  • ITC135P - Integrated Telecom Circuits (Clare Inc.)
  • ITC137P - Integrated Telecom Circuits (Clare Inc.)
Other Datasheets by Innogration
Published: |