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ITCH16180B2E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITCH16180B2E datasheet PDF. This datasheet also includes the ITCH16180B2 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (ITCH16180B2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH16180B2E
Manufacturer Innogration
File Size 1.01 MB
Description High Power RF LDMOS FET
Download ITCH16180B2E Download (PDF)

General Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

ITCH16180B2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Overview

Innogration (Suzhou) Co., Ltd.

Document Number: ITCH16180B2 Preliminary Datasheet V2.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc VD.

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