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ITCH16180B4 - High Power RF LDMOS FET

The ITCH16180B4 by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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Official preview page of the ITCH16180B4 High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH16180B4
Manufacturer Innogration
File Size 1.12 MB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16180B4-Innogration.pdf
Additional preview pages of the ITCH16180B4 datasheet.

ITCH16180B4 Product details

Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

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