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ITCH16180B4 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B4 Product Datasheet V2.

Datasheet Details

Part number ITCH16180B4
Manufacturer Innogration
File Size 1.12 MB
Description High Power RF LDMOS FET
Download ITCH16180B4 Download (PDF)

General Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.

Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network.

ITCH16180B4 Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.