ITCH25280D4 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH25280D4 Preliminary Datasheet V1.

ITCH25280D4 high power rf ldmos fet by Innogration - Datasheet Preview

Datasheet Details

Part number	ITCH25280D4
Manufacturer	Innogration
File Size	622.10 KB
Description	High Power RF LDMOS FET
Download	ITCH25280D4 Download (PDF)

General Description

The ITCH25280D4 is a 280-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz.

It is qualified up to 32V operation.

Typical Performance (on Innogration fixture with device soldered): Idq=20mA Tcase=25 Degree C Freq(MHz) Pout (W) Vdd(V) Ids(A) Gp（dB） Eff(%) 2450 310 32 17 13.5 57 ITCH25280D4

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage.

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