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ITCH25180B2 - High Power RF LDMOS FET

Description

The ITCH25180B2 is a 180-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz.

It is qualified up to 32V operation.

Typical Performance (on Innogration fixture

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Excellent thermal stability, low HCI drift.
  • Compliant to Restriction of Hazardous Substances (RoHS) Direc.

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Datasheet preview – ITCH25180B2

Datasheet Details

Part number ITCH25180B2
Manufacturer Innogration
File Size 637.35 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH25180B2 Datasheet
Additional preview pages of the ITCH25180B2 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH25180B2 Preliminar Datasheet V3.0 2400-2500MHz, 180W, High Power RF LDMOS FETs Description The ITCH25180B2 is a 180-watt, internally matched LDMOS FETs, designed for Multiple use especially RF Energy application including cooking, heating and medical with frequencies from 2400 to 2500 MHz. It is qualified up to 32V operation. ITCH25180B2 Typical Performance (on Innogration fixture with device soldered): CW signal, Tcase = 25 degree C, frequency 2450MHz Vdd(V) Vgs(V) Idq(mA) Pin(dBm) Pout(dBm) Pout(W) 28 2.27 20 39.8 52.3 170 32 2.26 20 39.3 53 200 Gain(dB) 12.5 13.6 IDS(A) 10.
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