Datasheet4U Logo Datasheet4U.com

ITDE10600D4 Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Datasheet Details

Part number ITDE10600D4
Manufacturer Innogration
File Size 438.37 KB
Description High Power RF LDMOS FET
Download ITDE10600D4 Download (PDF)

General Description

The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 16 600 69 915MHz 100us,10%, Pulsed 16.5 630 70 Recommended driver: MU1503V operated at 40V Document Number: ITDE10600D4 Preliminary Datasheet V1.0 ITDE10600D4 ITDE10600D4E

Overview

Innogration (Suzhou) Co., Ltd.

1GHz, 600W, 40V High Power RF LDMOS.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.