ITDE10600D4E Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

Download the ITDE10600D4E datasheet PDF. This datasheet also includes the ITDE10600D4 variant, as both parts are published together in a single manufacturer document.

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ITDE10600D4E high power rf ldmos fet by Innogration - Datasheet Preview — Note: The manufacturer provides a single datasheet file (ITDE10600D4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	ITDE10600D4E
Manufacturer	Innogration
File Size	438.37 KB
Description	High Power RF LDMOS FET
Datasheet	ITDE10600D4E Datasheet

General Description

The ITDE10600D4 is a 600-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 16 600 69 915MHz 100us,10%, Pulsed 16.5 630 70 Recommended driver: MU1503V operated at 40V Document Number: ITDE10600D4 Preliminary Datasheet V1.0 ITDE10600D4 ITDE10600D4E

Overview

Innogration (Suzhou) Co., Ltd.

1GHz, 600W, 40V High Power RF LDMOS.

Key Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

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