MQ081K0VP - High Power RF LDMOS FET

Innogration

The MQ081K0VP by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

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MQ081K0VP High Power RF LDMOS FET by Innogration - Datasheet Preview — Official preview page of the **MQ081K0VP** High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number	MQ081K0VP
Manufacturer	Innogration
File Size	659.17 KB
Description	High Power RF LDMOS FET
Datasheet	MQ081K0VP-Innogration.pdf
Additional preview pages of the MQ081K0VP datasheet.

MQ081K0VP Product details

Description

The MQ081K00VP is a 1000-watt capable, high performance, internally matched LDMOS FET, designed for narrow band pulsed applications with frequencies 400MHz to 800MHz. Typical Performance (on innogration demo with device soldered): Frequency:440MHz,: Vds = 50 Volts, Idq = 100 mA, TA = 25 C Pulse condition Gp (dB) POUT(W) D@POUT (%) pulse width 100us duty cycle 10% 19.3 1060 68.5 Document Number: MQ081K0VP Preliminary Datasheet V1.0 MQ081K0VP

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Excellent thermal stability, low HCI drift.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature R.

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Published: Aug 5, 2018 |