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MQ1080VP Datasheet High Power RF LDMOS FET

Manufacturer: Innogration

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Datasheet Details

Part number MQ1080VP
Manufacturer Innogration
File Size 379.31 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MQ1080VP Datasheet

General Description

The MQ1080VP is a 800-watt, high performance, internally matched LDMOS FET, designed for multiple applications with frequencies 0.5 to 1GHz.

It is featured for high power and high ruggedness, suitable for Industrial, Scientific and Medical application, as well as UHF TV and Aerospace applications.

Document Number: MQ1080VP Preliminary Datasheet V1.0 MQ1080VP Typical Performance (on 650MHz test fixture with device soldered): Test signal: Pulse CW pulse width: 100us, duty cycle:10%, VDD = 50 Volts, IDQ = 200 mA, TA = 25 C Frequency Gp (dB) POUT(W) D@POUT (%) 650 MHz 16 800 67 Suitable Applications  470-860MHz (TV UHF)  650MHz particle accelerator  915MHz RF Energy industry application  Wideband Lab power amplifier  High power intermodulation tester

Overview

MQ1080VP LDMOS TRANSISTOR 800W, 50V High Power RF LDMOS FETs.

Key Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • La.

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