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VTSU01900 - RF Power N-channel MOSFET

The VTSU01900 by Innogration is a RF Power N-channel MOSFET. Below is the official datasheet preview.

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Official preview page of the VTSU01900 RF Power N-channel MOSFET datasheet (Innogration).

Datasheet Details

Part number VTSU01900
Manufacturer Innogration
File Size 859.64 KB
Description RF Power N-channel MOSFET
Datasheet download datasheet VTSU01900-Innogration.pdf
Additional preview pages of the VTSU01900 datasheet.

VTSU01900 Product details

Description

The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz.It’s suitable for use in industrial, scientific and medical applications. Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, CW Frequency Gp (dB) POUT (W) D (%) 120 MHz

Features

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