VTSU01900 Datasheet RF Power N-channel MOSFET

Manufacturer: Innogration

VTSU01900 rf power n-channel mosfet by Innogration - Datasheet Preview

Datasheet Details

Part number	VTSU01900
Manufacturer	Innogration
File Size	859.64 KB
Description	RF Power N-channel MOSFET
Download	VTSU01900 Download (PDF)

General Description

The VTSU01900 is a 900-watt, N-channel MOSFETs, designed for pulsed or CW applications at frequencies up to 200 MHz.

It’s suitable for use in industrial, scientific and medical applications.

 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10% Frequency Gp (dB) POUT (W) D (%) 120 MHz 20 900 65 Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, CW Frequency Gp (dB) POUT (W) D (%) 120 MHz 24 550 68

Overview

Innogration (Suzhou) Co., Ltd.

900W, 100V RF Power N-channel.

Key Features

Common source configuration, push pull.
Excellent thermal stability, low HCI drift.
Low RDS(on).
Pb-free, RoHS-compliant Document Number: VTSU01900 Production Datasheet V1.0 VTSU01900 Drain 1 Gate 2 Source 3 Figure 1. Pin Connection Table 1. Maximum Ratings Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Drain Current Power Dissipati.

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