Integrated Device Technology, Inc.
CMOS STATIC RAM
16K (4K x 4-BIT)
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation—2V data retention voltage
• Available in high-density 20-pin ceramic or plastic DIP, 20-
• Produced with advanced CMOS high-performance
• CMOS process virtually eliminates alpha particle soft-error
• Bidirectional data input and output
• Military product compliant to MIL-STD-883, Class B
The IDT6168 is a 16,384-bit high-speed static RAM orga-
nized as 4K x 4. It is fabricated using lDT’s high-performance,
high-reliability CMOS technology. This state-of-the-art tech-
nology, combined with innovative circuit design techniques,
provides a cost-effective approach for high-speed memory
Access times as fast 15ns are available. The circuit also
offers a reduced power standby mode. When CS goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery. All inputs and outputs of the
IDT6168 are TTL-compatible and operate from a single 5V
The IDT6168 is packaged in either a space saving 20-pin,
300-mil ceramic or plastic DIP, 20-pin SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGE
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
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