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IS62WV25616BLL Datasheet - Integrated Silicon Solution

ULTRA LOW POWER CMOS STATIC RAM

IS62WV25616BLL Features

* High-speed access time: 55ns, 70ns

* CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby

* TTL compatible interface levels

* Single power supply 1.65V

* 2.2V VDD (IS62WV25616ALL) 2.5V

* 3.6V VDD (IS62WV25616BLL)

* Fully

IS62WV25616BLL General Description

The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consu.

IS62WV25616BLL Datasheet (388.25 KB)

Preview of IS62WV25616BLL PDF

Datasheet Details

Part number:

IS62WV25616BLL

Manufacturer:

Integrated Silicon Solution

File Size:

388.25 KB

Description:

Ultra low power cmos static ram.

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IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

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